Abstract
A model is described, which makes it possible to calculate the distribution of nonequilibrium carriers and an electric field near the p–n junction, which arose as a result of the internal photoeffect. Using laser illumination, the possibilities to control the properties of nanolayered structures sensitive to the concentration of free carriers are analyzed. The mutual location of the region of the intense absorption of radiation and the p–n junction itself is varied and the linear and square mechanisms of carrier recombination are analyzed.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
Uvarov, N.F., Ponomareva, V.G., and Lavrova, G.V., Composite solid electrolytes, Russ. J. Electrochem., 2010, vol. 46, no. 7, pp. 722–733.
Sata, N., Eberman, K., Eberl, K., and Maier, J., Mesoscopic fastion conduction in nanometre-scale planar heterostructures, Nature, 2000, vol. 408, pp. 946–949.
Guo, X.X., Matei, I., Lee, J.-S., and Maier, J., Ion conduction across nanosized CaF2/BaF2 multilayer heterostructures, Appl. Phys. Lett., 2007, vol. 91, p. 103102. doi 10.1063/1.2779254
Tveryanovich, Yu.S., Fokina, S.V., Borisov, E.N., and Tomaev, V.V., Preparation of films of vitreous solid electrolyte (GeSe2)30(Sb2Se3)30(AgI)40 using laser ablation method, Glass Phys. Chem., 2015, vol. 41, no. 4, pp. 440–442.
Fokina, S.V., Borisov, E.N., Tomaev, V.V., Tumkin, I.I., and Tveryanovich, Yu.S., AgI thin films prepared by laser ablation, Solid State Ionics, 2016, vol. 29, pp. 764–767.
Tveryanovich, Yu.S., Bandura, A.V., Fokina, S.V., Borisov, E.N., and Evarestov, R.A., Nanolayered solid electrolyte (GeSe2)30(Sb2Se3)30(AgI)40/AgI: A new hypothesis for the conductivity mechanism in layered AgI, Solid State Ionics, 2016, vol. 294, pp. 82–89.
Tveryanovich, Yu.S., Fokina, S.V., Kurochkin, A.V., Borisov, E.N., Krzhizhanovskaya, M.G., and Bal’makov, M.D., Temperature hysteresis of AgI phase transition in AgI-chalcogenide glass nanolayered films, Glass Phys. Chem., 2016, vol. 42, no. 2, pp. 172–176.
Bobylev, Yu.V., Murin, I.V., and Tver’yanovich, Yu.S., Electrical conductivity of glasses in the Ag–As–Se–Te system, Glass Phys. Chem., 2005, vol. 31, no. 2, pp. 165–167.
Bobylev, Yu.V., Bychkov, E.A., and Tver’yanovich, Yu.S., Electrical properties of glasses in the AgI–As2Te3 system, Glass Phys. Chem., 2004, vol. 30, no. 6, pp. 519–522.
Shimojo, F. and Okazaki, H., Boundary condition effect in MD simulation: A case of the α→β phase transition in superionic conductor Ag2Se, J. Phys. Soc. Jpn., 1993, vol. 62, pp. 179–182.
Schoen, D.T., Xie, C., and Cui, Y., Electrical switching and phase transformation in silver selenide nanowires, J. Am. Chem. Soc., 2007, vol. 129, pp. 4116–4117.
Kittel, C., Thermal Physics, New York: Wiley, 1973.
Smith, R., Semiconductors, Cambridge: Cambridge Univ. Press, 1959.
Shalimova, K.V., Fizika poluprovodnikov (Semiconductor Physics), Moscow: Nauka, 1985.
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © A.V. Kuz’menko, Yu.S. Tver’yanovich, 2017, published in Fizika i Khimiya Stekla.
Rights and permissions
About this article
Cite this article
Kuz’menko, A.V., Tver’yanovich, Y.S. Distribution of nonequilibrium carriers in the region of a p–n junction under various photogeneration conditions. Glass Phys Chem 43, 421–428 (2017). https://doi.org/10.1134/S108765961705011X
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S108765961705011X