Abstract
Edge-emitting lasers with active regions based on novel InGaAs/GaAs quantum heterostructures of transitional dimensionality, i.e., quantum well-dots, which are intermediate in properties between quantum wells and quantum dots, are studied. It is shown that the rate of the lasing-wavelength blue shift decreases with increasing number of quantum well-dot layers in the active region and with increasing optical confinement factor as the cavity length decreases. In a laser with 10 quantum well-dot layers, the lasing-wavelength position remains within the limits of the fundamental optical transition down to the smallest cavity lengths (100 μm). In devices with a single quantum well-dot layer and/or with a low optical confinement factor, lasing directly switches from the ground state to waveguide states omitting excited states below ≤200 μm. Such an effect has not been observed in quantum-well- and quantum-dot lasers and can be attributed to the abnormally low density of excited states in quantum well-dots.
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Funding
This study was supported by the Ministry of Science and Higher Education of the Russian Federation, project no. 0791-2020-0002.
A.E. Zhukov and A.M. Nadtochiy acknowledge the support of the Basic research program of the National Research University Higher School of Economics in 2020.
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Translated by A. Kazantsev
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Shernyakov, Y.M., Gordeev, N.Y., Payusov, A.S. et al. Effect of the Active Region and Waveguide Design on the Performance of Edge-Emitting Lasers Based on InGaAs/GaAs Quantum Well-Dots. Semiconductors 55, 333–340 (2021). https://doi.org/10.1134/S1063782621030167
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DOI: https://doi.org/10.1134/S1063782621030167