Abstract
Three laser structures with a single strained InGaAs quantum well of different depths and a GaAs or Al0.1Ga0.9As waveguide region are grown by metal-organic chemical vapor deposition. Using the experimentally determined values of the threshold current density and internal differential quantum efficiency, the velocity of electron capture into the quantum well is calculated for each of these structures. It is found that the capture velocity into deep quantum wells is significantly lower than into shallow ones.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
L. V. Asryan, S. Luryi, and R. A. Suris, Appl. Phys. Lett. 81, 2154 (2002).
L. V. Asryan, S. Luryi, and R. A. Suris, IEEE J. Quantum Electron. 39, 404 (2003).
Z. N. Sokolova, I. S. Tarasov, and L. V. Asryan, Semiconductors 45, 1494 (2011).
Z. N. Sokolova, I. S. Tarasov, and L. V. Asryan, Semiconductors 46, 1044 (2012).
L. V. Asryan and Z. N. Sokolova, J. Appl. Phys. 115, 023107 (2014).
Z. N. Sokolova, I. S. Tarasov, and L. V. Asryan, Quantum Electron. 44, 801 (2014).
Z. N. Sokolova, N. A. Pikhtin, I. S. Tarasov, and L. V. Asryan, Semiconductors 49, 1506 (2015).
Z. N. Sokolova, K. V. Bakhvalov, A. V. Lyutetskiy, N. A. Pikhtin, I. S. Tarasov, and L. V. Asryan, Electron. Lett. 51, 780 (2015).
P. V. Bulaev, V. A. Kapitonov, A. V. Lyutetskii, A. A. Marmalyuk, D. B. Nikitin, D. N. Nikolaev, A. A. Padalitsa, N. A. Pihtin, A. D. Bondarev, I. D. Zalevskii, and I. S. Tarasov, Semiconductors 36, 1065 (2002).
A. Yu. Leshko, A. V. Lyutetskii, N. A. Pihtin, S. O. Slipchenko, Z. N. Sokolova, N. V. Fetisova, E. G. Golikova, Yu. A. Ryaboshtan, and I. S. Tarasov, Semiconductors 36, 1308 (2002).
S. O. Slipchenko, D. A. Vinokurov, N. A. Pikhtin, Z. N. Sokolova, A. L. Stankevich, I. S. Tarasov, and Zh. I. Alferov, Semiconductors 38, 1430 (2004).
M. P. C. M. Krijn, Semicond. Sci. Technol. 6, 27 (1991).
L. V. Asryan, Quantum Electron. 35, 1117 (2005).
L. V. Asryan and R. A. Suris, Semicond. Sci. Technol. 11, 554 (1996).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © Z.N. Sokolova, K.V. Bakhvalov, A.V. Lyutetskiy, N.A. Pikhtin, I.S. Tarasov, L.V. Asryan, 2016, published in Fizika i Tekhnika Poluprovodnikov, 2016, Vol. 50, No. 5, pp. 679–682.
Rights and permissions
About this article
Cite this article
Sokolova, Z.N., Bakhvalov, K.V., Lyutetskiy, A.V. et al. Dependence of the electron capture velocity on the quantum-well depth in semiconductor lasers. Semiconductors 50, 667–670 (2016). https://doi.org/10.1134/S1063782616050225
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063782616050225