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Kinetics of vertical transport and localization of electrons in strained semiconductor supperlattices

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Abstract

The kinetics of vertical electron transport in a semiconductor superlattice is considered taking into account partial localization of electrons. The time dependences of photoemission currents from samples based on a strained semiconductor superlattice calculated by numerically solving the kinetic equation are in good agreement with experimental data. Comparison of the theory with experiment makes it possible to determine the characteristic electron localization and thermoactivation times, the diffusion length, and losses of photoelectrons in the superlattice.

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Authors and Affiliations

  1. St. Petersburg State Technical University, St. Petersburg, 195251, Russia

    L. G. Gerchikov, Yu. A. Mamaev & Yu. P. Yashin

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  1. L. G. Gerchikov
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  2. Yu. A. Mamaev
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  3. Yu. P. Yashin
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Correspondence to L. G. Gerchikov.

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Original Russian Text © L.G. Gerchikov, Yu.A. Mamaev, Yu.P. Yashin, 2015, published in Zhurnal Eksperimental’noi i Teoreticheskoi Fiziki, 2015, Vol. 148, No. 2, pp. 339–348.

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Gerchikov, L.G., Mamaev, Y.A. & Yashin, Y.P. Kinetics of vertical transport and localization of electrons in strained semiconductor supperlattices. J. Exp. Theor. Phys. 121, 294–302 (2015). https://doi.org/10.1134/S1063776115090058

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  • DOI: https://doi.org/10.1134/S1063776115090058

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