Abstract
The entrainment of impurities by moving dislocations results in the accumulation of impurities in dislocation cores, which eventually significantly modifies the dynamic properties of dislocations. In the framework of the kink mechanism, the possible modes of motion are found self-consistently and the conditions for dislocation immobilization are determined. The dependence of the immobilization stress (the parameter that is most important for “defect engineering” in semiconductors) on the material parameters and experimental conditions is calculated.
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Dedicated to the memory of A.V. Shubnikov
Original Russian Text © B.V. Petukhov, P.A. Klyuchnik, 2012, published in Kristallografiya, 2012, Vol. 57, No. 3, pp. 443–447.
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Petukhov, B.V., Klyuchnik, P.A. Dynamic interaction of dislocations with impurity subsystem in crystalline materials. Crystallogr. Rep. 57, 388–392 (2012). https://doi.org/10.1134/S1063774512030169
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DOI: https://doi.org/10.1134/S1063774512030169