Abstract
Methods for determining the concentration of gallium in germanium doped using nuclear transmutations induced by thermal and epicadmium neutrons from measurements of resistivity in the region of low (liquid-helium) temperatures are considered. In order to evaluate the gallium concentration, it is suggested to use the concentration dependences of hopping resistivity ρ3 and the resistivity measured at a temperature of 2.5 K.
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References
K. Lark-Horovitz, in Semi-Conducting Materials (Butterworths, London, 1951; Inostrannaya Literatura, Moscow, 1954).
A. G. Zabrodskii and M. V. Alekseenko, Fiz. Tekh. Poluprovodn. (St. Petersburg) 28, 168 (1994) [Semiconductors 28, 101 (1994)].
M. V. Alekseenko, A. G. Zabrodskii, and L. M. Shterengas, Fiz. Tekh. Poluprovodn. (St. Petersburg) 32, 811 (1998) [Semiconductors 32, 720 (1998)].
B. I. Shklovskii and A. L. Éfros, Electronic Properties of Doped Semiconductors (Nauka, Moscow, 1979; Springer, New York, 1984); Fiz. Tekh. Poluprovodn. (Leningrad) 14, 825 (1980) [Sov. Phys. Semicond. 14, 487 (1980)].
H. Fritzsche and M. Cuevas, Phys. Rev. 119, 1238 (1960).
J. A. Ghroboczek, H. Fritzsche, and C. L. Jiang, Philos. Mag. B 44, 685 (1981).
A. R. Gadzhiev and I. S. Shlimak, Fiz. Tekh. Poluprovodn. (Leningrad) 6, 1582 (1972) [Sov. Phys. Semicond. 6, 1364 (1972)].
A. G. Zabrodskii, A. G. Andreev, and M. V. Alekseenko, Fiz. Tekh. Poluprovodn. (St. Petersburg) 26, 431 (1992) [Sov. Phys. Semicond. 26, 244 (1992)].
N. A. Poklonskii, S. Yu. Lopatin, and A. G. Zabrodskii, Fiz. Tverd. Tela (St. Petersburg) 42, 432 (2000) [Phys. Solid State 42, 441 (2000)].
N. Mott and W. Toose, Usp. Fiz. Nauk 79, 691 (1963).
A. G. Zabrodskii, Pis’ma Zh. Éksp. Teor. Fiz. 33, 258 (1981) [JETP Lett. 33, 243 (1981)].
A. G. Beda, V. V. Vainberg, and F. M. Vorobkalo, Fiz. Tekh. Poluprovodn. (Leningrad) 15, 1546 (1981) [Sov. Phys. Semicond. 15, 896 (1981)].
Yu. A. Osip’yan, V. M. Prokopenko, and V. I. Tal’yanskii, Zh. Éksp. Teor. Fiz. 87, 269 (1984) [Sov. Phys. JETP 60, 156 (1984)].
M. V. Alekseenko, A. G. Andreev, and A. G. Zabrodskii, Pis’ma Zh. Tekh. Fiz. 13, 1295 (1987) [Sov. Tech. Phys. Lett. 13, 541 (1987)].
M. Pollak and M. L. Knotek, Solid State Commun. 21, 183 (1977).
E. M. Gershenzon, I. N. Kurilenko, and L. B. Litvak-Gorskaya, Fiz. Tekh. Poluprovodn. (Leningrad) 8, 1186 (1974) [Sov. Phys. Semicond. 8, 768 (1974)].
H. Fritzsche, The Metal-Nonmetal Transition in Disordered Systems, Ed. by L. R. Friedman and D. P. Tunstall (Scotish Univ. Summer School, 1978), p. 193.
N. F. Mott and E. A. Davis, Electronic Processes in Non-Crystalline Materials, 2nd ed. (Clarendon Press, Oxford, 1979; Mir, Moscow, 1982).
M. L. Kozhukh and N. S. Lipkina, Fiz. Tekh. Poluprovodn. (Leningrad) 21, 284 (1987) [Sov. Phys. Semicond. 21, 172 (1987)].
O. P. Ermolaev, Fiz. Tekh. Poluprovodn. (St. Petersburg) 28, 2021 (1994) [Semiconductors 28, 1113 (1994)].
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 38, No. 3, 2004, pp. 285–288.
Original Russian Text Copyright © 2004 by Ermolaev, Mikul’chik.
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Ermolaev, O.P., Mikul’chik, T.Y. Determination of gallium concentration in germanium doped using neutron-induced nuclear transmutation from measurements of resistivity in the region of hopping conductivity. Semiconductors 38, 273–276 (2004). https://doi.org/10.1134/1.1682325
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DOI: https://doi.org/10.1134/1.1682325