Abstract
The thermovoltaic effect in films of variband solid solution Si1–x Ge x (0 ≤ x ≤ 1) has been observed for the first time. The samples comprised n-Si–p-Si1–x Ge x (0 ≤ x ≤ 1) heterostructures grown by liquid phase epitaxy. An electromotive force within 0.05–0.3 mV and a current of 0.0025–0.0035 μA appeared on heating samples in a temperature range from 40 to 250°C.
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Original Russian Text © A.S. Saidov, A.Yu. Leyderman, A.B. Karshiev, 2016, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2016, Vol. 42, No. 14, pp. 21–27.
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Saidov, A.S., Leyderman, A.Y. & Karshiev, A.B. The thermovoltaic effect in variband solid solution Si1–x Ge x (0 ≤ x ≤ 1). Tech. Phys. Lett. 42, 725–728 (2016). https://doi.org/10.1134/S1063785016070270
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DOI: https://doi.org/10.1134/S1063785016070270