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Mean escape depth of secondary electrons emitted from semiconductors and insulators

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Abstract

Based on dominant physical processes and characteristics of secondary electron emission, formula for maximum yield was deduced. On the basis of relation among secondary electron escape probability, maximum yield from semiconductors and insulators, primary energy of maximum yield and average energy required to produce a secondary electron, mean escape depth of secondary electrons emitted from semiconductors and insulators as a function of atomic number, average atomic number, back-scattering coefficient, material density, atomic weight and primary energy of maximum yield were deduced. Calculated mean escape depth of secondary electrons were compared with the values measured experimentally and the scattering of mean escape depth of secondary electrons from same material was analyzed. It was concluded that the formulae presented were found to be universal for the mean escape depth of secondary electrons emitted from semiconductors and insulators.

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Acknowledgments

This project is supported by the Special Funds of National Natural Science Foundation of China (No: 51245010).

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Authors and Affiliations

  1. School of Physics and Optoelectronic Engineering, Nanjing University of Information Science and Technology, Nanjing, 210044, China

    A. G. Xie, S. R. Xiao & H. Y. Wu

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  1. A. G. Xie
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  2. S. R. Xiao
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  3. H. Y. Wu
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Correspondence to A. G. Xie.

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Xie, A.G., Xiao, S.R. & Wu, H.Y. Mean escape depth of secondary electrons emitted from semiconductors and insulators. Indian J Phys 87, 1093–1097 (2013). https://doi.org/10.1007/s12648-013-0355-8

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  • DOI: https://doi.org/10.1007/s12648-013-0355-8

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