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Room Temperature 2DEG Mobility Above 2350 cm2/V·s in AlGaN/GaN HEMT Grown on GaN Substrate

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Abstract

A high quality Al0.25Ga0.75N/GaN high electron mobility transistor (HEMT) structure was grown on a 2-inch GaN substrate by metalorganic chemical vapor deposition (MOCVD). In order to protect the stability of the GaN substrate, this paper proposes a two-stage heating method for surface stabilization. This method can effectively protect the GaN substrate during the heating treatment and is conducive to obtaining a smooth film surface and low dislocation density. Root-mean-square (RMS) roughness of the structure was as low as 0.12 nm over a 10 × 10 μm2 region. The dislocation density was approximately on the order of 105 cm−2. The HEMT structure exhibited a room temperature two-dimensional electron gas (2DEG) mobility up to 2396 cm2/V·s with a 2DEG density of 0.89 × 1013 cm−2. This is the highest mobility ever reported. This high 2DEG mobility is partly attributed to the smooth surface and good crystal quality.

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Acknowledgments

This work was supported by the National Key Research and Development Program of China (2017YFB0402900) and National Science and Technology Major Project.

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Authors and Affiliations

  1. Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, People’s Republic of China

    Jiayan Chu, Quan Wang, Lijuan Jiang, Chun Feng, Wei Li, Hongxin Liu, Hongling Xiao & Xiaoliang Wang

  2. College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, People’s Republic of China

    Jiayan Chu, Lijuan Jiang, Chun Feng, Wei Li, Hongxin Liu, Hongling Xiao & Xiaoliang Wang

  3. State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, People’s Republic of China

    Quan Wang

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  1. Jiayan Chu
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Correspondence to Hongling Xiao or Xiaoliang Wang.

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Chu, J., Wang, Q., Jiang, L. et al. Room Temperature 2DEG Mobility Above 2350 cm2/V·s in AlGaN/GaN HEMT Grown on GaN Substrate. J. Electron. Mater. 50, 2630–2636 (2021). https://doi.org/10.1007/s11664-021-08778-y

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  • DOI: https://doi.org/10.1007/s11664-021-08778-y

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