Abstract
Eutectic solders AuIn19 and AuGe12 and nanosilver paste were investigated for SiC die attach in high-temperature (300°C) applications. The soldering or sintering conditions were optimized through die shear tests performed at room temperature. In particular, application of static pressure (3.5 MPa) during sintering resulted in greatly improved mechanical behavior of the nanosilver-based joint. Microstructural study of the eutectic solders showed formation of Au-rich grains in AuGe die attach and significant diffusion of Au and In through the Ni layer in AuIn19 die attach, which could lead to formation of intermetallic compounds. Die shear tests versus temperature showed that the behaviors of the studied die attaches are different; nevertheless they present suitable shear strengths required for high-temperature applications. The mechanical behavior of joints under various levels of thermal and mechanical stress was also studied. Creep experiments were carried out on the eutectic solders to describe the thermomechanical behavior of the complete module; only one creep mechanism was observed in the working range.
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J. Emmerlich, D. Music, P. Eklund, O. Wilhelmsson, U. Jansson, J.M. Schneider, H. Högberg, and L. Hultman, Acta Mater. 55, 1479–1488 (2007).
M.R. Jennings, A. Pérez-Tomas, M. Davies, D. Walker, L. Zhu, P. Losee, W. Huang, S. Balachandran, O.J. Guy, J.A. Covington, T.P. Chow, and P.A. Mawby, Solid State Electron. 51, 797–801 (2007).
F.P. McCluskey, M. Dash, Z. Wang, and D. Huff, Microelectron. Reliab. 46, 1910–1914 (2006).
M. Hecker, R. Hübner, R. Ecke, S. Schulz, H.-J. Engelmann, H. Stegmann, V. Hoffmann, N. Mattern, T. Gessner, and E. Zschech, Microelectron. Eng. 64, 269–277 (2002).
W. Dorner, H. Mehrer, P.J. Pokela, E. Kolawa, and M.-A. Nicolet, Mater. Sci. Eng. B10, 165–169 (1991).
V. Chidambaram, H.B. Yeung, and G. Shan, J. Electron. Mater. 41, 2256–2266 (2012).
S. Tanimoto, K. Matsui, Y. Murakami, H. Yamaguchi and H. Okumura, IMAPS International Conference and Exhibition on High Temperature Electronics (HITEC 2010).
S. Tanimoto, K. Matsui, Y. Zushi, S. Sato, Y. Murakami, M. Takamori, and T. Iseki, Mater. Sci. Forum 853, 717–720 (2012).
P. Zheng, A. Wiggins, R.W. Johnson, R. Frampton, S.J. Adam, and L. Peltz, International Conference on High Temperature Electronics (HiTEC 2008), (Albuquerque: May 12–15, 2008).
R. Wayne Johnson and J. Williams, Mater. Sci. Forum 483–485, 785–790 (2005).
S. Kim, K.-S. Kim, S.-S. Kim, and K. Kim, Suganuma. J. Electron. Mater. 38, 2668–2675 (2009).
J.E. Jellison, Gold-Indium Intermetallic Compounds: Properties and Growth Rates, NASA GSFC Code 313, Materials Control and Applications Branch (MC&AB), 11/8/79, Ed. H. Leidecker, 7/03.
Product Data Sheet NBE Tech: NanoTach (nanosilver paste).
G. Bai, Low-Temperature Sintering of Nanoscale Silver Paste for Semiconductor Device Interconnection, Dissertation. Faculty of Virginia Polytechnic Institute and State University (2005).
Military of the United States Standards—Test Methods for Electronic Circuits (MIL-STD-883).
A. Drevin-Bazin, F. Badawi, F. Lacroix, and J.F. Barbot, Mater. Sci. Forum 740–742, 1032–1035 (2013).
A. Masson, C. Buttay, H. Morel, C. Raynaud, S. Hascoët, AND L. Grémillard, Proceedings of the IEEE 14th European Conference on Power Electronics and Application— EPE. (Birmingham: United Kingdom, 2011 [hal-00672602-version 1]).
F. Lang, H. Yamaguchi, H. Ohashi, and H. Sato, J. Electron. Mater. 40, 1563–1571 (2011).
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Drevin-Bazin, A., Lacroix, F. & Barbot, J.F. SiC Die Attach for High-Temperature Applications. J. Electron. Mater. 43, 695–701 (2014). https://doi.org/10.1007/s11664-013-2718-5
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DOI: https://doi.org/10.1007/s11664-013-2718-5