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Density-functional-theory formulation of classical and quantum Hooke’s law

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  • Special Topic: Mechanical Behaviour of Micro- and Nano-Scale Materials
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Abstract

A fundamental property of solid materials is their stress state. Stress state of a solid or thin film material has profound effects on its thermodynamic stability and physical and chemical properties. The classical mechanical stress (σ M) originates from lattice strain (ɛ), following Hooke’s law: σ M=, where C is elastic constant matrix. Recently, a new concept of quantum electronic stress (σ QE) is introduced to elucidate the extrinsic electronic effects on the stress state of solids and thin films, which follows a quantum analog of classical Hooke’s law: σ QE=Ξ(Δn), where Ξ is the deformation potential of electronic states and Δn is the variation of electron density. Here, we present mathematical derivation of both the classical and quantum Hooke’s law from density functional theory. We further discuss the physical origin of quantum electronic stress, arising purely from electronic excitation and perturbation in the absence of lattice strain (ɛ=0), and its relation to the degeneracy pressure of electrons in solid and their interaction with the lattice.

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References

  1. Cammarata R C. Surface and interface stress effects in thin films. Prog Surf Sci, 1994, 46: 1–38

    Article  Google Scholar 

  2. Ieong M, Doris B, Kedzierski J, et al. Silicon device scaling to the sub-10-nm regime. Science, 2004, 306: 2057–2060

    Article  Google Scholar 

  3. Schäffler F. High-mobility Si and Ge structures. Semicond Sci Tech, 1997, 12: 1515

    Article  Google Scholar 

  4. Feng J, Qian X F, Huang C W, et al. Strain-engineered artificial atom as a broad-spectrm solar energy funnel. Nat Photon, 2012, 6: 866–872

    Article  Google Scholar 

  5. Huang M, Boone C, Roberts M, et al. Nanomechanical architecture of strained bilayer thin films: From design principles to experimental fabrication. Adv Mater, 2005, 17: 2860–2864

    Article  Google Scholar 

  6. Yu D, Liu F. Synthesis of carbon nanotubes by rolling up patterned graphene nanoribbons using selective atomic adsorption. Nano Lett, 2007, 7: 3046–3050

    Article  Google Scholar 

  7. Hu H, Gao H J, Liu F. Theory of directed nucleation of strained islands on patterned substrates. Phys Rev Lett, 2008, 101: 216102

    Article  Google Scholar 

  8. Hu H, Gao H J, Liu F. Quantitative model of heterogeneous nucleation and growth of SiGe quantum dot molecules. Phys Rev Lett, 2012, 109: 106103

    Article  Google Scholar 

  9. Sazonova V, Yaish Y, Ustunel H, et al. A tunable carbon nanotube electromechanical oscillator. Nature, 2004, 431: 284–287

    Article  Google Scholar 

  10. Zang J, Liu F. Theory of bending of Si nanocantilevers induced by molecular adsorption: A modified Stoney formula for the calibration of nanomechanochemical sensors. Nanotechnology, 2007, 18: 405501

    Article  Google Scholar 

  11. Khang D Y, Jiang H, Huang Y, et al. A stretchable form of single-crystal silicon for high-performance electronics on rubber substrates. Science, 2006, 311: 208–212

    Article  Google Scholar 

  12. Hu H, Liu M, Wang Z F, et al. Quantum electronic stress: Density-functional-theory formulation and physical manifestation. Phys Rev Lett, 2012, 109: 055501

    Article  Google Scholar 

  13. Vosko S H, Wilk L, Nusair M. Accurate spin-dependent electron liquid correlation energies for local spin density calculations: A critical analysis. Can J Phys, 1980, 58: 1200–1211

    Article  Google Scholar 

  14. Ceperley D M, Alder B J. Ground state of the electron gas by a stochastic method. Phys Rev Lett, 1980, 45: 566–569

    Article  Google Scholar 

  15. Hohenberg P, Kohn W. Inhomogeneous electron gas. Phys Rev, 1964, 136: B864–B871

    Article  MathSciNet  Google Scholar 

  16. Nielsen O H, Martin R M. First-principles calculation of stress. Phys Rev Lett, 1983, 50: 697–700

    Article  Google Scholar 

  17. Nielsen O H, Martin R M. Quantum-mechanical theory of stress and force. Phys Rev B, 1985, 32: 3780–3791

    Article  Google Scholar 

  18. Parr R G, Yang W T. Density functional approach to the frontier-electron theory of chemical reactivity. J Am Chem Soc, 1984, 106: 4049–4050

    Article  Google Scholar 

  19. Madelung O, Schulz M. Numerical Data and Functional Relationships in Science and Technology, Londolt-Börnstein, Group III, New Series, Vol. 22. Berlin: Springer-Verlag, 1987

    Google Scholar 

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Correspondence to Feng Liu.

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Hu, H., Liu, F. Density-functional-theory formulation of classical and quantum Hooke’s law. Sci. China Technol. Sci. 57, 692–698 (2014). https://doi.org/10.1007/s11431-014-5500-x

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  • DOI: https://doi.org/10.1007/s11431-014-5500-x

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