Abstract
Effects of rare earth Dy and transition metal (TM = Cu, Co and Mn) ions co-doping on the structural, electrical and ferroelectric properties of the BiFeO3 thin films prepared on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method were investigated. All thin films formed as randomly oriented polycrystalline, with no detectable impurity or secondary phases. Among the thin films, the (Bi0.9Dy0.1)(Fe0.975Mn0.025)O3 thin film exhibited well saturated hysteresis loops with remnant polarization (2P r ) of 51 μC/cm2 and low coercive electric field (2E c ) of 685 at 935 kV/cm and low leakage current density of 1.4 × 10−5 A/cm2 at 100 kV/cm. The enhanced properties observed in the co-doped thin films could be considered as being the results of the suppression of ionic defects and of the modified microstructure.
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This work was supported by Priority Research Centers Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2010-0029634).
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Raghavan, C.M., Kim, J.W. & Kim, S.S. Studies on structural and electrical properties of transition metal ions (Mn, Co and Cu) co-doped Bi0.9Dy0.1FeO3 thin films. J Sol-Gel Sci Technol 67, 486–491 (2013). https://doi.org/10.1007/s10971-013-3105-7
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DOI: https://doi.org/10.1007/s10971-013-3105-7