Abstract
Ba4.2Nd9.2Ti18−xSnxO54(x = 0, 0.25, 0.5, 1, 1.5, 2) microwave dielectric ceramics with high Q × f value were prepared by conventional solid state route. The microstructure and microwave dielectric properties of Ba4.2Nd9.2Ti18−xSnxO54(x = 0, 0.25, 0.5, 1, 1.5, 2)(BNTS) ceramics were systematically investigated. XRD patterns showed that there was only a single BaNd2Ti5O14 phase identified in all samples and no second phase was found. SnO2 substitution increases the lattice parameters of BNT ceramic. Moreover, the bulk density of BNT ceramics increases as the x increases. Both the permittivity and τ f value decrease when the Sn concentration increases. The SnO2 substitution has a big influence on Q × f value. When x = 0.5, the BNTS ceramic gains the highest Q × f value. Afterwards, the Q × f value decreases sharply when x value increases. Excellent microwave dielectric properties were achieved in Ba4.2Nd9.2Ti18−xSnxO54(x = 0.5) ceramics sintered at 1340 °C for 2 h: ε r = 80.6, Q × f = 9177 GHz, τ f = 61 ppm/°C.
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Acknowledgments
This work was supported by Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD), the Opening Project of State Key Laboratory of High Performance Ceramics and Superfine Microstructure (Project No. SKL201309SIC) and Science and Technology Projects of Guangdong Province (Project No. 2011A091103002). College Industrialization Project of Jiangsu Province (JHB2012-12).
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Huang, B., Wang, Z., Chen, T. et al. Microstructure and microwave dielectric properties of Ba4.2Nd9.2Ti18−xSnxO54(x = 0, 0.25, 0.5, 1, 1.5, 2) ceramics. J Mater Sci: Mater Electron 26, 3375–3379 (2015). https://doi.org/10.1007/s10854-015-2843-4
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DOI: https://doi.org/10.1007/s10854-015-2843-4