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Synthesis and high temperature transport properties of Te-doped skutterudite compounds

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Abstract

Te-doped skutterudite compounds Co4Sb12−x Te x (x = 0.4–0.7) have been fabricated by solid state reaction method and spark plasma sintering. The scanning electron microscope images indicate all samples are compact and the average particle size increases with the Te doping fraction. The carrier concentration and electrical conductivity exhibit positive doping fraction dependence, and a maximum electrical conductivity of 16.29 × 104 Sm−1 is obtained at 300 K for Co4Sb11.3Te0.7. The values of the power factor (x = 0.4–0.6) are greater than 4.0 × 10−3 Wm−1 K−2 at the temperature range of 650–800 K, larger than previous literature reports. The lattice thermal conductivity decreases monotonously over the whole investigated temperature range and exhibits a negative doping fraction dependence except for Co4Sb11.3Te0.7. The resultant dimensionless figure of merit of all the samples increases monotonously over the whole investigated temperature range, and a maximum value of 0.95 is achieved at 800 K for Co4Sb11.4Te0.6.

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Acknowledgments

This work is supported by the National Basic Research Program of China (973 Program, Grant no. 2007CB607506) and National Natural Science Foundation of China (NSFC, Grant nos. 10672127 and 10832008).

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Authors and Affiliations

  1. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, No. 122, Luoshi Road, Wuhan, 430070, China

    Bo Duan, Pengcheng Zhai, Lisheng Liu & Qingjie Zhang

  2. Nanoscience and Technology Center, Wuhan University, No. 138, Bayi Road, Wuhan, 430072, China

    Xuefeng Ruan

Authors
  1. Bo Duan
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  2. Pengcheng Zhai
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  3. Lisheng Liu
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  4. Qingjie Zhang
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Correspondence to Pengcheng Zhai.

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Duan, B., Zhai, P., Liu, L. et al. Synthesis and high temperature transport properties of Te-doped skutterudite compounds. J Mater Sci: Mater Electron 23, 1817–1822 (2012). https://doi.org/10.1007/s10854-012-0668-y

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  • DOI: https://doi.org/10.1007/s10854-012-0668-y

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