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An analytical 3D model for short-channel effects in undoped FinFETs

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Abstract

An analytical and scalable model for the threshold voltage in FinFETs has been developed by solving the 3-D Poisson equation using appropriate techniques. The model is also based on a physical analysis of the conduction path. The mobile charge term was considered in the 3-D Poisson’s equation to be solved. The threshold voltage is defined as the gate voltage to obtain a certain threshold charge density. Due to its 3-D basis, the model inherently accounts for short-channel effects, such as the threshold voltage roll-off and the Drain Induced Barrier Lowering effect. A very good agreement with 3-D numerical simulations has been observed.

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Acknowledgments

The authors wish to thank the IMEC, Leuven, Belgium. This research was partially funded by Zewail City of Science and Technology, AUC, Semi-Conductor Research Cooperation, Global Foundries, the STDF, Intel, Mentor Graphics, and MCIT.

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Authors and Affiliations

  1. Center for Nanoelectronics and Devices (CND), Zewail City of Science and Technology, Sheikh Zayed district, 6th October City, Giza, 12588, Egypt

    Hamdy Abd El Hamid & Yehea Ismail

  2. Center of Nanoelectronics and devices (CND), American University in Cairo, Cairo, Egypt

    Hamdy Abd El Hamid & Yehea Ismail

  3. Departament d’Enginyeria Electrònica, Elèctrica i Automàtica, Universitat Rovira i Virgili, Tarragona, Spain

    Benjamin Iñiguez

  4. Laboratoire de Microélectronique (DICE), Université catholique de Louvain (UCL), Place du Levant, 3, 1340, Louvain-la-Neuve, Belgium

    Valeria Kilchytska & Denis Flandre

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  1. Hamdy Abd El Hamid
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  2. Benjamin Iñiguez
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  3. Valeria Kilchytska
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  4. Denis Flandre
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  5. Yehea Ismail
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Correspondence to Hamdy Abd El Hamid.

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El Hamid, H.A., Iñiguez, B., Kilchytska, V. et al. An analytical 3D model for short-channel effects in undoped FinFETs. J Comput Electron 14, 500–505 (2015). https://doi.org/10.1007/s10825-015-0678-0

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  • DOI: https://doi.org/10.1007/s10825-015-0678-0

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