Abstract
This paper presents matching condition for detector at THz frequencies, which directly read signals from an integrated antenna. We use direct THz-signal detections with CMOS transistors in non-resonant plasma wave mode, which are embedded in on-chip resonating antennas. The detector detects THz envelope signals directly from the side edges of the on-chip patch antennas. The signal detection mechanism is studied in the view of the impedance conditions of the antenna and the detector. The detectors are implemented with stacked transistors structures to achieve high responsivity. The measured responsivities of the detectors with antenna impedances that were simulated to be 599.7, 912.3, 1565, and 3190.6 Ω agree well with the calculated values. Moreover, the responsivity dependence on the detector impedance is shown with two different input impedances of the detectors. Since CMOS circuit models from foundry are not accurate at frequencies higher than f t , the matching guideline between the antenna and the detector is very useful in designing high responsivity detectors. This study found that a detector has to have a large input impedance conjugately matched to the antenna’s impedance to have high responsivity.
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E. Öjefors, U.R. Pfeiffer, A. Lisauskas, H.G. Roskos: A 0.65 THz Focal-Plane Array in a quarter-micron CMOS process technology. IEEE J. Solid State Circuits, vol. 44, no. 7, pp.1968–1976, (2009). doi: https://doi.org/10.1109/JSSC.2009.2021911
S.-S. Hsu, K.-C. Wei, C.-Y. Hsu, H. Ru-Chuang: A 60-GHz millimeter-Wave CPW-fed Yagi antenna fabricated by using 0. 18-μm CMOS Technology. IEEE Electron Device Lett., vol. 29, no. 6, pp. 625–627, (2008). doi: https://doi.org/10.1109/LED.2008.920852
T. hirano, K. Okada, J. hirokawa, M. Ando: 60 GHz on-chip patch antenna integrated in a 0. 13-μm CMOS technology. in ICUWB, (2010), pp. 4–7
Y.-H. Chuang, H.-L. Yue, C.-Y. Hsu, H.-R. Chuang: A 77-GHz integrated on-chip Yagi antenna with unbalanced-to-balanced bandpass filter using IPD technology. in Asia Pacific Microwave Conference, (2011), pp. 449–452.
U. R. Pfeiffer, E. Öjefors: A 600-GHz CMOS focal-plane array for terahertz imaging applications. ESSCIRC 2008 - 34th Eur. Solid-State Circuits Conf., (2008), pp. 110–113,
F. Schuster, H. Videlier, A. Dupret, D. Coqulillat, M. Sakowicz, J.-P. Rostaing, M. Tchagaspanian, B. Giffard, W. Knap: A broadband THz imager in a low-cost CMOS technology. in IEEE ISSCC Tech. Dig., 2011, vol. Feb, no. 11, pp. 42–43. doi: https://doi.org/10.1109/ISSCC.2011.5746211
R.A. Hadi, H. Sherry, J. Grzyb, Y. Zhao, W. Förster, H.M. Keller, A. Cathelin, A. Kaiser, U.R. Pfeiffer: A 1 K-pixel video camera for 0.7-1.1 terahertz imaging applications in 65-nm CMOS. IEEE J. Solid-State Circuits, vol. 47, no. 12, pp. 2999–3012, (2012). Doi: https://doi.org/10.1109/JSSC.2012.2217851
E. Öjefors, U.R. Pfeiffer, S. Member, A. Lisauskas, H.G. Roskos: A 0.65 THz focal-plane array in a quarter-micron technology. IEEE J. Solid-State Circuits, vol. 44, no. 7, pp. 1968–1976, (2009). doi: https://doi.org/10.1109/JSSC.2009.2021911
M. Uzunkol, O. D. Gurbuz, F. Golcuk, G. M. Rebeiz: A 0.32 THz SiGe 4x4 imaging array using high-efficiency on-chip antennas. IEEE J. Solid-State Circuits, vol. 48, no. 9, pp. 2056–2066, (2013). doi: https://doi.org/10.1109/JSSC.2009.2021911
S. Chai, S. Lim, S. Hong: THz detector with an antenna coupled stacked CMOS plasma-Wave FET. IEEE Microw. Wirel. Components Lett., vol. 24, no. 12, pp. 869–871, (2014). doi: https://doi.org/10.1109/LMWC.2014.2353211
M. Mundt, D. Seliuta, L. Minkevičius, I. Kašalynas, G. Valušis, M. Mittendorff, S. Winnerl, V. Krozer, H.G. Roskos: CMOS integrated antenna-coupled field-effect transistors for the detection of radiation from 0.2 to 4.3 THz. IEEE Trans. Microw. Theory Tech., vol. 60, no. 12, pp. 3834–3843, (2012). doi: https://doi.org/10.1109/TMTT.2012.2221732
H.-J. Song, T. Nagatsuma: Present and future of terahertz communications. IEEE Trans. Terahertz Sci. Technol., vol. 1, no. 1, pp. 256–263, (2011). doi: https://doi.org/10.1109/TTHZ.2011.2159552
M. I. Dyakonov, M. S. Shur: Plasma wave ectronics: novel terahertz devices using two dimensional electron fluid. IEEE Trans. Electron Devices, vol. 43, no. 10, pp. 1640–1645, (1996). doi: https://doi.org/10.1109/16.536809
M. Dyakonov, M. Shur: Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electronic fluid. Electron Devices, IEEE Trans., vol. 43, no. 3, pp. 380–387, (1996). doi: https://doi.org/10.1109/16.536809
A. Lisauskas, S. Boppel, M. Mundt, V. Krozer, H.G. Roskos: Subharmonic mixing with field-effect transistors: theory and experiment at 639 GHz high above. IEEE Sens. J., vol. 13, no. 1, pp. 124–132, (2013). doi: https://doi.org/10.1109/JSEN.2012.2223668
T. a Elkhatib, V. Y. Kachorovskii, W. J. Stillman, D. B. Veksler, K. N. Salama, X. Zhang, M. S. Shur: Enhanced plasma wave detection of terahertz radiation using multiple high electron-mobility transistors connected in series. IEEE Trans. Microw. Theory Tech., vol. 58, no. 2, pp. 331–339, (2010). doi: https://doi.org/10.1109/TMTT.2009.2037872
D. Veksler, F. Teppe, A. Dmitriev, V. Kachorovskii, W. Knap, M. Shur: Detection of terahertz radiation in gated two-dimensional structures governed by dc current. Phys. Rev. B, vol. 73, no. 12, pp. 1–10, Mar. (2006). Doi: https://doi.org/10.1103/PhysRevB.73.125328
T. A. Elkhatib, V. Y. Kachorovskii, W. J. Stillman, S. Rumyantsev, X. Zhang, M. S. Shur: Terahertz response of field-effect transistors in saturation regime. Appl. Phys. Lett., vol. 243505, pp. 2011–2014, (2011). Doi: https://doi.org/10.1063/1.3584137
W. Stillman, M. S. Shur, D. Veksler, S. Rumyantsev, F. Guarin: Device loading effects on nonresonant detection of terahertz radiation by silicon MOSFETs. Electron. Lett., vol. 43, no. 7, pp. 7–8, (2007). doi: https://doi.org/10.1049/el:20073475
U. Pfeiffer, E. Öjefors: A CMOS focal-plane array for heterodyne terahertz imaging. in IEEE RFIC Symp., 2009, no. c, pp. 433–436. (2009). doi: https://doi.org/10.1109/RFIC.2009.5135574
F. Golcuk, O. D. Gurbuz, G. M. Rebeiz: A 0.39–0.44 THz 2x4 amplifier-quadrupler array with peak EIRP of 3–4 dBm. IEEE Trans. Microw. Theory Tech., vol. 61, no. 12, pp. 4483–4491, (2013). doi: https://doi.org/10.1109/TMTT.2013.2287493
A. Lisauskas, U. Pfeiffer, E. Öjefors, P.H. Bolívar, D. Glaab, H.G. Roskos: Rational design of high-responsivity detectors of terahertz radiation based on distributed self-mixing in silicon field-effect transistors. J. Appl. Phys., vol. 105, no. 11, p. 114511, (2009). doi: https://doi.org/10.1063/1.3140611
S. Preu, S. Kim, R. verma, P.C.Burke, N.S. Sherwin, C. cossard: An improved model for non-resonant terahertz detection in field-effect transistors. J. Appl. Phys., vol. 024502, pp. 1–9, (2012). doi: https://doi.org/10.1063/1.3676211
M. Sakhno, A. Golenkov, F. Sizov: Uncooled detector challenges: millimeter-wave and terahertz long channel field effect transistor and Schottky barrier diode detectors. J. Appl. Phys., vol. 114, no. 16, p. 164503, (2013). doi: https://doi.org/10.1063/1.4826364
M. Sakowicz, M.B. Lifshits, O.A. Klimenko, F. Schuster, D. Coquillat, F. Teppe, W. Knap: Terahertz responsivity of field effect transistors versus their static channel conductivity and loading effects. J. Appl. Phys., vol. 110, no. 5, (2011). doi: https://doi.org/10.1063/1.3632058
C. A. Balanis, Antenna theory analysis and design, 3rd edn. (Wiley-Interscience 1997).
X. Jin, J.-J. Ou, C.-H. Chen, W. Liu, M.J. Deen, P.R. Gray, C. Hu: An effective gate resistance model for CMOS RF and noise modeling. Int. Electron Devices Meet. 1998. Tech. Dig. (Cat. No.98CH36217), pp. 961–964, (1998). doi: https://doi.org/10.1109/IEDM.1998.746514
H.T. Friis: A note on a simple transmission formula. Proc. IRE Waves Electrons, vol. 34, no. 5, pp. 254–256, (1946). doi: https://doi.org/10.1109/JRPROC.1946.234568
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This research was supported by the Pioneer Research Center Program through the National Research Foundation of Korea funded by the Ministry of Science, ICT & Future Planning (No.2012-0009594).
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Chai, S., Lim, S., Kim, CY. et al. Matching Condition of Direct THz-Signal Detection from On-Chip Resonating Antennas with CMOS Transistors in Non-resonant Plasma Wave Mode. J Infrared Milli Terahz Waves 39, 521–534 (2018). https://doi.org/10.1007/s10762-018-0490-6
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DOI: https://doi.org/10.1007/s10762-018-0490-6