Abstract
This paper reports the results of measuring the sidebands in the emitted visible spectrum of a novel homojunction-structured silicon (Si) light emitting diode (LED), which was fabricated by Joule annealing assisted by dressed-photon–phonons. Using pump–probe spectroscopy, both the fundamentals and higher-order harmonics of the longitudinal optical (LO) phonon were observed for the first time. These fundamentals and harmonics are the constituent components of the multimode coherent phonons generated in the nanometric spaces around the inhomogeneous domain boundaries of boron doped in the Si LED. Furthermore, it was confirmed that the fourth-order harmonics of the LO phonon are the origin of the sidebands in the emission spectrum of the Si LED.
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Wada, N., Tran, M.A., Kawazoe, T. et al. Measurement of multimode coherent phonons in nanometric spaces in a homojunction-structured silicon light emitting diode. Appl. Phys. A 115, 113–118 (2014). https://doi.org/10.1007/s00339-013-7906-x
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DOI: https://doi.org/10.1007/s00339-013-7906-x