Abstract
The thickness of two-dimensional (2D) layered materials is only a few hundred nanometers (nm), which has a unique nanoscale planar structure. Molybdenum disulfide (MoS2) is a typical semiconductor two-dimensional atomic crystal material, which has excellent physical and electrical properties and so shows great potential in nano-electronic and optical applications. MoS2 semiconductor has a direct band gap of 1.90 eV (single layer configuration) and an indirect band gap of 1.29 eV (multi-layer configuration). With the weak van der Waal’s forces between the layers, the monolayer MoS2 shows more excellent properties in optoelectronic devices than graphene with zero band gap. Transferring molybdenum disulfide film from growth substrate to target substrate is a key problem in practical application. From the original micromechanical stripping to the most widely used wet etching method, more methods have been discovered, in order to improve the transfer quality of molybdenum disulfide films. This review focuses on discussing about ultrasonic bubbling transfer and surface energy assisted transfer methods, which improve the transfer quality of MoS2 thin film.
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Acknowledgements
This work was supported by the Zhejiang Provincial Natural Science Foundation of China Grant No. LQ19F040003.
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Song, X., Ye, Y., Peng, Y. (2021). Transfer Methods of CVD-Grown Two-Dimensional MoS2: A Brief Review. In: Peng, Y., Dong, X. (eds) Proceedings of 2019 International Conference on Optoelectronics and Measurement. Lecture Notes in Electrical Engineering, vol 726. Springer, Singapore. https://doi.org/10.1007/978-981-33-4110-4_6
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DOI: https://doi.org/10.1007/978-981-33-4110-4_6
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