ABSTRACT
FinFET has become a successful replacement of MOSFETs for offering sustainable performance at lower technology nodes in leading semiconductor industries like Intel, Samsung, and TSMC, etc. The main attraction of this device lies in its better gate controllability by multiple fins over the active channel when compared with conventional MOS devices. Temperature is one of the important factors whose impact on device performance can never be neglected due to the dependence of carrier transport onto it. Here, the proposed work examines various output parameters of 2-fin and 5-fin FinFET devices and compares the results for these devices being designed on bulk and oxide substrate. All the simulations have been performed on TCAD platform by varying the temperature from 200 to 400 K. It has been noted from the device characteristics that the current increases with the increase in the fin count. On/off-current ratio and subthreshold swing vary in inverse proportion with temperature.
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Acknowledgements
Authors would like to thank Guru Nanak Dev Engineering College for providing the facilities required to conduct this proposed work.
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Singh, S., Gill, S.S., Kaur, N. (2021). Temperature Dependence of Multi-fin FinFET for Bulk and SOI Substrate at 20 nm Channel Length. In: Singh, H., Singh Cheema, P.P., Garg, P. (eds) Sustainable Development Through Engineering Innovations. Lecture Notes in Civil Engineering, vol 113. Springer, Singapore. https://doi.org/10.1007/978-981-15-9554-7_44
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DOI: https://doi.org/10.1007/978-981-15-9554-7_44
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