Abstract
Nanolithography using Non-Contact Mode Atomic Force Microscopy (NCM-AFM) is a promising method for the manufacture of nanometer sized devices. Compact models which suggest nanopatterned oxide dots with Gaussian or Lorentzian profiles are implemented in a Monte Carlo simulator in a level set environment. An alternative to compact models is explored with a physics based Monte Carlo model, where the AFM tip is treated as a point charge and the silicon wafer as an infinite conducting plane. The strength of the generated electric field creates oxyions which accelerate towards the silicon surface and cause oxide growth and surface deformations. A physics based model is presented, generating an oxide dot based on the induced surface charge density. Comparisons to empirical models suggest that a Lorentzian profile is better suited to describe surface deformations when compared to the Gaussian profile.
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References
Binning, G., Quate, C.F., Gerber, C.: Atomic Force Microscopy. Physical Review Letters, 930 (1986)
Calleja, M., García, R.: Nano-Oxidation of Silicon Surfaces by Noncontact Atomic-Force Microscopy: Size Dependence on Voltage and Pulse Duration. Applied Physics Letters 76(23), 3427–3429 (2000)
Dagata, J.A., Perez-Murano, F., Abadal, G., Morimoto, K., Inoue, T., Itoh, J., Yokoyama, H.: Predictive Model for Scanned Probe Oxidation Kinetics. Applied Physics Letters 76(19), 2710–2712 (2000)
Dagata, J., Schneir, J., Harary, H., Evans, C., Postek, M., Bennett, J.: Modification of Hydrogen-Passivated Silicon by a Scanning Tunneling Microscope Operating in Air. Applied Physics Letters 56, 2001–2003 (1990)
Ertl, O., Selberherr, S.: A Fast Level Set Framework for Large Three-Dimensional Topography Simulations. Computer Physics Communications 180(8), 1242–1250 (2009)
Filipovic, L., Ceric, H., Cervenka, J., Selberherr, S.: A Simulator for Local Anodic Oxidation of Silicon Surfaces. In: IEEE Canadian Conference on Electrical and Computer Engineering 2011 (CCECE 2011), Niagara Falls, Ontario, Canada (May 2011)
Fontaine, P., Dubois, E., Stiévenard, D.: Characterization of Scanning Tunneling Microscopy and Atomic Force Microscopy-Based Techniques for Nanolithography on Hydrogen-Passivated Silicon. Journal of Applied Physics 84(4), 1776–1781 (1998)
Huang, J., Tsai, C.L., Tseng, A.A.: The Influence of the Bias Type, Doping Condition and Pattern Geometry on AFM Tip-Induced Local Oxidation. Journal of the Chinese Institute of Engineers 33(1), 55–61 (2010)
Mesa, G., Dobado-Fuentes, E., Saenz, J.: Image Charge Method for Electrostatic Calculations in Field Emission Diodes. Journal of Applied Physics 79(1), 39–44 (1996)
Notargiacomo, A., Tseng, A.: Assembling Uniform Oxide Lines and Layers by Overlapping Dots and Lines Using AFM Local Oxidation. In: 9th IEEE Conference on Nanotechnology, pp. 907–910 (July 2009)
Tang, Q., Shi, S.Q., Zhou, L.: Nanofabrication with Atomic Force Microscopy. Journal of Nanoscience and Nanotechnology 4(8), 948–963 (2004)
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Filipovic, L., Selberherr, S. (2012). A Monte Carlo Simulator for Non-contact Mode Atomic Force Microscopy. In: Lirkov, I., Margenov, S., Waśniewski, J. (eds) Large-Scale Scientific Computing. LSSC 2011. Lecture Notes in Computer Science, vol 7116. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-29843-1_50
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DOI: https://doi.org/10.1007/978-3-642-29843-1_50
Publisher Name: Springer, Berlin, Heidelberg
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