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PSP: An advanced surface-potential-based MOSFET model

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TRANSISTOR LEVEL MODELING FOR ANALOG/RF IC DESIGN

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Authors and Affiliations

  1. High Tech Campus 5, Philips Research Laboratories, 5656AE, Eindhoven, The Netherlands

    R.van Langevelde

  2. Department of Electrical Engineering, The Pennsylvania State University University Park, 16802, PA, USA

    G. Gildenblat

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  1. R.van Langevelde
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  2. G. Gildenblat
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  1. Freescale, Switzerland

    WLADYSLAW GRABINSKI

  2. Belgium

    BART NAUWELAERS

  3. Kasteelpark Arenberg 10, 3001, Leuven, Belgium

    DOMINIQUE SCHREURS

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Langevelde, R., Gildenblat, G. (2006). PSP: An advanced surface-potential-based MOSFET model. In: GRABINSKI, W., NAUWELAERS, B., SCHREURS, D. (eds) TRANSISTOR LEVEL MODELING FOR ANALOG/RF IC DESIGN. Springer, Dordrecht. https://doi.org/10.1007/1-4020-4556-5_2

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