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Photo-enhanced polymer memory device based on polyimide containing spiropyran

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Abstract

This paper reports the synthesis of a new polyimide (PI) containing a spiropyran moiety in the side chain and its applications to the switchable polymer memory before and after UV exposure. UV exposure allows memory using spiropyran-based PI as an active layer with a higher current and lower switching-ON voltage compared to the unexposed device due to the structural changes in the spiropyran moiety after UV exposure. In addition, this study examined the effects of UV exposure on the performance of the memory containing spiropyran-based PI using the UV-Vis absorption spectra and space-charge limited conduction (SCLC) model.

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Authors and Affiliations

  1. School of Chemical Engineering, Yeungnam University, Gyeongsan, 38541, Korea

    Woong Chul Seok, Seok Ho Son, Se Hyun Kim & Seung Woo Lee

  2. Department of Polymer Science & Engineering, Korea National University of Transportation, Chungju, 27469, Korea

    Tae Kyu An

Authors
  1. Woong Chul Seok
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  2. Seok Ho Son
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  3. Tae Kyu An
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  4. Se Hyun Kim
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  5. Seung Woo Lee
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Correspondence to Tae Kyu An, Se Hyun Kim or Seung Woo Lee.

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Seok, W.C., Son, S.H., An, T.K. et al. Photo-enhanced polymer memory device based on polyimide containing spiropyran. Electron. Mater. Lett. 12, 537–544 (2016). https://doi.org/10.1007/s13391-016-4019-7

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  • DOI: https://doi.org/10.1007/s13391-016-4019-7

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