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Investigation of diode parameters using I–V and C–V characteristics of Al/maleic anhydride (MA)/p-Si structure

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Abstract

Al/maleic anhydride (MA)/p-Si metal–polymer–semiconductor (MPS) structures were prepared on p-Si substrate by spin coating. Device parameters of Al/MA/p-Si structure have been determined by means of capacitance–voltage (C–V) and conductance–voltage (G–V) measurements between 700 kHz and 1⋅5 MHz and current–voltage (I–V) measurements at 300 K. The parameters of diode such as the ideality factor, series resistance, barrier height (BH) and flat band barrier height were calculated from the forward bias I–V characteristics. The investigation of interface states that density and series resistance from C–V and G–V characteristics in Al/MA/p-Si device has been reported. The frequency dependence of the capacitance could be attributed to trapping states. Several important device parameters such as the BH ϕ b, fermi energy (E F), diffusion voltage (V D), donor carrier concentration (N D) and space charge layer width (W D) for the device have been obtained between 700 kHz and 1⋅5 MHz. The I–V, C–V-f and G–V-f characteristics confirm that the parameters like the BH, interface state density (D it) and series resistance (R s) of the diode are strongly dependent on the electrical parameters in the MPS structures.

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Acknowledgements

This work is supported by Gazi University BAP office with the research project numbers 41/2012-02 and 41/2012-01.

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Authors and Affiliations

  1. Gazi University, Teknik Bilimler M.Y.O, Ostim, Ankara, Turkey

    S BILGE OCAK

  2. Saraykoy Nuclear Research and Training Centre, 06983, Saray, Kazan, Ankara, Turkey

    A B SELÇUK & G KAHRAMAN

  3. Faculty of Engineering-Architecture, Electrical-Electronics Department, Balikesir University, Balikesir, Turkey

    A H SELÇUK

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  1. A B SELÇUK
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  2. S BILGE OCAK
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Correspondence to S BILGE OCAK.

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SELÇUK, A.B., OCAK, S.B., KAHRAMAN, G. et al. Investigation of diode parameters using I–V and C–V characteristics of Al/maleic anhydride (MA)/p-Si structure. Bull Mater Sci 37, 1717–1724 (2014). https://doi.org/10.1007/s12034-014-0729-3

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