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Cyclic Annealing During Metalorganic Vapor-Phase Epitaxial Growth of (211)B CdTe on (211) Si Substrates

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Abstract

High-quality (211)B CdTe buffer layers on Si substrates are required to enable Hg1–x Cd x Te growth and device fabrication on lattice-mismatched Si substrates. Metalorganic vapor-phase epitaxy (MOVPE) of (211)B CdTe on Si substrates using Ge and ZnTe interlayers has been achieved. Cyclic annealing has been used during growth of thick CdTe layers in order to improve crystal quality. The best (211)B CdTe/Si films grown in this study display a low x-ray diffraction (XRD) rocking-curve full-width at half-maximum (FWHM) of 85 arcsec and etch pit density (EPD) of 2 × 106 cm−2. These values are the best reported for MOVPE-grown (211) CdTe/Si and are comparable to those for state-of-the-art molecular beam epitaxy (MBE)-grown CdTe/Si.

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Acknowledgements

This work was partially supported by US Army STTR Contract W911NF-07-C-0105 through Agiltron Inc. (Dr. Matthew Erdtmann) and US ARMY Phase I STTR Contract W911NF-07-C-0085 through Brimrose Corp. Many discussions with Dr. P. Wijewarnasuriya of ARL are also appreciated. We thank Dr. William Clark of ARO for all his encouragement.

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Authors and Affiliations

  1. Department of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY, 12180, USA

    S. R. Rao, S. S. Shintri & I. B. Bhat

  2. U.S. Army RDECOM CERDEC, NVESD, Ft. Belvoir, VA, 22060, USA

    J. K. Markunas & R. N. Jacobs

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  1. S. R. Rao
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  2. S. S. Shintri
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  3. J. K. Markunas
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  4. R. N. Jacobs
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  5. I. B. Bhat
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Correspondence to S. R. Rao.

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Rao, S.R., Shintri, S.S., Markunas, J.K. et al. Cyclic Annealing During Metalorganic Vapor-Phase Epitaxial Growth of (211)B CdTe on (211) Si Substrates. J. Electron. Mater. 39, 996–1000 (2010). https://doi.org/10.1007/s11664-010-1095-6

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  • DOI: https://doi.org/10.1007/s11664-010-1095-6

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