Calculations from first principles density functional theory are used to study magnetic properties of silicon carbide doped with several percent of first row transition metal impurities. It is shown that transition-metal-doped SiC can be in either a nonmagnetic or a magnetic state. For different impurities the two states are separated by an energy gap with the width on the order of several tens of milli-electron volts or the transition between the states is gradual. We suggest that, at a high enough temperature, the relationship between the states can change or there can exist a new state which is a mix of the magnetic and nonmagnetic states. Calculated mean-field values of the Curie temperature suggest that ferromagnetic ordering at room temperature is possible in Mn-doped SiC.
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Los, A., Los, V. & Timoshevskii, A. Multiple Magnetic States of Silicon Carbide Diluted Magnetic Semiconductors. J. Electron. Mater. 39, 545–553 (2010). https://doi.org/10.1007/s11664-009-1023-9
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DOI: https://doi.org/10.1007/s11664-009-1023-9