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Effect of scattering from localized surface plasmon resonance on improving the luminescence efficiency of silicon nitride light-emitting devices

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Abstract

We demonstrate the localized surface plasmon resonance enhanced silicon-rich silicon nitride based light-emitting devices by embedding the silver nanostructures between the silicon substrate and luminescent matrix. An about 30 times enhancement of external quantum efficiency is achieved by these inserted silver nanostructures. We attribute this distinct enhancement mainly to the improved back-scattering and carrier injection by the addition of silver nanostructures. The coupling between localized surface plasmons and excitons as well as the increase of light extraction via the surface roughening of ITO electrode also contributes to the enhancement of electroluminescence intensity and its efficiency.

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Acknowledgments

The authors thank the 973 Program (No. 2013CB632102), the 863 Program (No. 2011AA050517), and the National Natural Science Foundation of China (No. 61176117).

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Authors and Affiliations

  1. State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, People’s Republic of China

    Feng Wang, Changrui Ren, Dongsheng Li & Deren Yang

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  1. Feng Wang
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  2. Changrui Ren
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  3. Dongsheng Li
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Correspondence to Dongsheng Li.

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Wang, F., Ren, C., Li, D. et al. Effect of scattering from localized surface plasmon resonance on improving the luminescence efficiency of silicon nitride light-emitting devices. J Nanopart Res 15, 1419 (2013). https://doi.org/10.1007/s11051-013-1419-6

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