Neutron Transmutation Doped (NTD) germanium thermistors, cut from metallized wafers, are useful in bolometry. The rise time of a bolometer depends on its heat capacity. We report measurements on the heat capacity of two NTD Ge wafers down to 24 mK temperatures. Both wafers were neutron irradiated and annealed, one of them had in addition undergone a boron implantation and metallization process. For the non-metallized wafer we found a Sommerfeld constant γ = 7.52·10−7 J K−2 cm−3. A comparison between the two wafers showed an excess heat capacity in the metallized wafer. For example, at 24 mK temperature, the specific heat of the metallized afer is more than twice the value of the non-metallized one.
Similar content being viewed by others
References
Brofferio C. et al. (2005). Nuc. Phys. B 145, 268
Arnaboldi C. et al. (2004). Nuc. Inst. Meth. A 518, 775
Haller E.E. (1994). Inf. Phys. Tech. 35, 127
Mott N.F. (1969). Phil. Mag. 19, 835
Barucci M., Beeman J., Olivieri E., Pasca E., Risegari L., Ventura G. (2005). Phys. B 368, 139
Woodcraft A. (2004). J. Low Temp. Phys. 134, 925
Anderson A.C., Peterson R.E. (1972). Phys. Lett. A 38, 519
Soudee J. (1998). J. Low Temp. Phys. 110: 1013
Wang N., Wellstood F.C., Sadoulet B., Haller E.E., Beeman J. (1990). Phys. Rev. B 41: 3761
E. Pasca, E. Olivieri, G. Ventura, M. Barucci, L. Risegari, and J. Beeman, 7th ICATPP Conf. Proc. on astroparticle and space physics, World Scientific, p. 684 (2002).
Aubourg E. et al. (1993). J. Low Temp. Phys. 93, 289
A. Alessandrello et al., Workshop on semiconductor thermistor for mk operation, UC Berkeley (1991).
Alessandrello A. et al. (1993). J. Low Temp. Phys. 93: 207
De Moor P. et al. (1993). J. Low Temp. Phys. 93,295
Keesom P.H., Seidel G. (1959). Phys. Rev. 113, 33
Stefanyi P. et al. (1994). Phys. B 161: 194
Bachman R., Rev. Sci. Inst. 43 (1972).
Barucci M., Brofferio C., Giuliani A., Gottardi E., Peroni I., Ventura G. (2001). J. Low Temp. Phys. 123: 303
Rusby R.L. (2002). J. Low Temp. Phys. 126: 633
Phillips N.E. (1965). Phys. Rev. 114, 676
Martin D.L. (1973). Phys. Rev. B 8: 5357
Bishoff J., Vassilev P.G., Goncharov I.N. (1982). Cryogenics 22: 131
Stephens R.B. (1973). Phys. Rev. 8: 2896
P. De Marcillac, private comunication.
Peterson R.E., Anderson A.C. (1973). J. Low Temp. Phys. 11, 639
Lounasmaa O.V. (1974). Experimental Principles and Methods Below 1 K. Academic, London
Bhatt R.N., Lee P.A. (1982). Phys. Rev. Lett. 48: 344
Marnieros S., Bergé L., Juillard A., Dumoulin L. (1999). Phys. B 259–261: 862
Shklovskii B.I., Efros A.L., Electronic Properties of Doped Semiconductors, Springer (1984).
Kaye and Laby, tables of physical and chemical constants: (http://www.kayelaby.npl.co.uk/chemistry/3_8/3_8_4.html).
Marnieros S. et al. (2004). Nuc. Inst. Meth. A 520: 101
Pedretti M. et al., Phys. B 329–333: 1614 (2003)
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Olivieri, E., Barucci, M., Beeman, J. et al. Excess Heat Capacity in NTD Ge Thermistors. J Low Temp Phys 143, 153–162 (2006). https://doi.org/10.1007/s10909-006-9214-8
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10909-006-9214-8