Abstract
In Czochralski-grown PPLN crystals, grown along X-axis and along the normal to the \({\{}01\bar{1}2{\}}\) face we obtain such small period as 2.5–2.8 μm. AFM study shows that the different etching regimes are needed for X-, Y- and Z-cuts of PPLN crystals. The etching conditions depend also on the type of crystal compound.
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Naumova, I.I., Evlanova, N.F., Dyakov, V.A. et al. Grown PPLN with small period: Selective chemical etching and AFM study. J Mater Sci: Mater Electron 17, 267–271 (2006). https://doi.org/10.1007/s10854-006-6940-2
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DOI: https://doi.org/10.1007/s10854-006-6940-2