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Atomic arrangements of a CuAu-I type ordered structure in strained In x Ga1 − xAs/In y Al1 − yAs multiple quantum wells

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Authors and Affiliations

  1. Advanced Semiconductor Research Center, Division of Electrical and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul, 133-791, Korea

    D. U. Lee, J. Y. Jin, T. Y. Yun & T. W. Kim

  2. Department of Materials Science and Metallurgical Engineering, Kyungpook National University, 1370 Sangyeok-dong, Buk-ku, Daegu, 702-701, Korea

    H. S. Lee

  3. Department of Materials Science and Engineering, University of Seoul, 90 Jeonnong-dong, Dongdaemun-gu, Seoul, 130-743, Korea

    M. S. Kwon

  4. Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1 Gusung-dong, Yusung-ku, Daejon, 305-701, Korea

    J. Y. Lee

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  1. D. U. Lee
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  2. J. Y. Jin
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  3. T. Y. Yun
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  4. T. W. Kim
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  5. H. S. Lee
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Correspondence to T. W. Kim.

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Lee, D.U., Jin, J.Y., Yun, T.Y. et al. Atomic arrangements of a CuAu-I type ordered structure in strained In x Ga1 − xAs/In y Al1 − yAs multiple quantum wells. J Mater Sci 40, 3843–3846 (2005). https://doi.org/10.1007/s10853-005-2557-8

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  • DOI: https://doi.org/10.1007/s10853-005-2557-8

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