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Heat blocking gallium arsenide solar cells

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Abstract

The solar cell industry is witnessing an era of unprecedented growth and this trend is set to continue for the foreseeable future. Here we describe a heat reflection pigment-coated single-junction gallium arsenide solar cell that is capable of reflecting heat-inducing near-infrared radiation. The cell maintains its performance better than non-coated cells when exposed to infrared-rich radiant flux. In situations where solar cells get heated mainly from incident infrared radiation, these cells exhibit superior performance. The heat reflecting pigment, cell structure, coating process and cell performance have been described.

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Authors and Affiliations

  1. Department of Electronics and Electrical Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, Glasgow, G12 8LT, UK

    F. Rahman, C.D. Farmer & C.R. Stanley

  2. Merck Research Laboratories, 64271, Darmstadt, Germany

    C. Schmidt & G. Pfaff

Authors
  1. F. Rahman
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  2. C.D. Farmer
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  3. C. Schmidt
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  4. G. Pfaff
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  5. C.R. Stanley
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Corresponding author

Correspondence to F. Rahman.

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PACS

84.60.Jt; 42.70.Km; 42.79.Wc

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Rahman, F., Farmer, C., Schmidt, C. et al. Heat blocking gallium arsenide solar cells. Appl. Phys. A 90, 231–236 (2008). https://doi.org/10.1007/s00339-007-4293-1

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  • DOI: https://doi.org/10.1007/s00339-007-4293-1

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