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Ultra thin films of nanocrystalline Ge studied by AFM and interference enhanced Raman scattering

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Abstract

Initial growth stages of the ultra thin films of germanium (Ge) prepared by ion beam sputter deposition have been studied using atomic force microscope (AFM) and interference enhanced Raman scattering. The growth of the films follows Volmer-Weber growth mechanism. Analysis of the AFM images shows that Ostwald ripening of the grains occurs as the thickness of the film increases. Raman spectra of the Ge films reveal phonon confinement along the growth direction and show that the misfit strain is relieved for film thickness greater than 4 nm.

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Authors and Affiliations

  1. Department of Instrumentation, Indian Institute of Science, 560 012, Bangalore, India

    S. Balaji & S. Mohan

  2. Department of Physics, Indian Institute of Science, 560 012, Bangalore, India

    D. V. S. Muthu & A. K. Sood

Authors
  1. S. Balaji
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  2. S. Mohan
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  3. D. V. S. Muthu
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  4. A. K. Sood
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Correspondence to A. K. Sood.

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Dedicated to Professor C N R Rao on his 70th birthday

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Balaji, S., Mohan, S., Muthu, D.V.S. et al. Ultra thin films of nanocrystalline Ge studied by AFM and interference enhanced Raman scattering. J Chem Sci 115, 401–410 (2003). https://doi.org/10.1007/BF02708231

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