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Stress-induced Degradation and Defect Studies in Strained-Si/SiGe MOSFETs

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Physics of Semiconductor Devices

Part of the book series: Environmental Science and Engineering ((ENVENG))

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Abstract

Effect of threading dislocations contributing to the increased 1/f noise in strained-Si MOSFETs is studied. Results of low-frequency noise study of strain-engineered MOSFETs are presented including 1/f and random telegraph noise (RTN). From the bias dependency of 1/f noise the correlated mobility fluctuation model (in NMOSFETs) is identified as the dominant noise mechanism. The low-frequency noise study reveals electrical stress-induced device degradation shown by the increased 1/f noise and complex RTN indicating reliability issues. A detailed low-frequency noise study in highly-scaled, strained MOS devices is presented indicating the capabilities of LF noise study for assessing device quality and lifetime essential in reliability analysis.

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Authors and Affiliations

  1. Dept. of Electronics and ECE, Indian Institute of Technology, Kharagpur, India

    Chhandak Mukherjee & C. K. Maiti

Authors
  1. Chhandak Mukherjee
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  2. C. K. Maiti
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Correspondence to Chhandak Mukherjee .

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Editors and Affiliations

  1. Amity Institute for Advanced Research and Studies (Meterials & Devices), Amity University, Noida, Uttar Pradesh, India

    V. K. Jain

  2. Amity Institute for Advanced Research and Studies (Meterials & Devices), Amity University, Noida, Uttar Pradesh, India

    Abhishek Verma

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© 2014 Springer International Publishing Switzerland

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Mukherjee, C., Maiti, C.K. (2014). Stress-induced Degradation and Defect Studies in Strained-Si/SiGe MOSFETs. In: Jain, V., Verma, A. (eds) Physics of Semiconductor Devices. Environmental Science and Engineering(). Springer, Cham. https://doi.org/10.1007/978-3-319-03002-9_5

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