Abstract
This Chapter presents two novel approaches for global modeling of high-frequency active microwave devices. The first approach considers the use of wavelets to reduce CPU time while maintaining the same degree of accuracy provided by standard global modeling simulators. The basic idea of multiresolution time domain(MRTD) technique is to adaptively refine grids at locations where the unknown variables vary rapidly, and an attractive way to implement it is to use wavelets.
The second approach presents a fully distributed equivalent circuit model for high-frequency transistors. The proposed distributed circuit model incorporates a sufficient number of segments to accurately account for wave propagation effects along the device width. For the first time, distributed circuit model having several segments is obtained in the time domain to analyze the large-signal behavior. In addition, a hybrid model that combines both physics-based and circuit-based models will be presented.
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Hussein, Y.A., Waliullah, M.D., El-Ghazaly, S.M. (2004). Efficient Simulators and Design Techniques for Global Modeling of High-Frequency Active Microwave Devices. In: Novel Technologies for Microwave and Millimeter — Wave Applications. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-4156-8_2
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DOI: https://doi.org/10.1007/978-1-4757-4156-8_2
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