Abstract
We present circuit design techniques currently employed for the development of analog front end electronics dedicated to the readout of radiation semiconductor sensors used in tracking detectors for High Energy Physics (HEP) experiments, where the channel counts can be very large. It is shown that for very large numbers of channels, power consumption turns out to be a critical issue in the design of the analog front end. In general, Signal-to-Noise-Ratio (SNR) and speed requirements have to be optimized together with the permitted power consumption. A selection of amplifier circuits are discussed in the context of the evolution of the CMOS technologies that impose the adaptation of design techniques to the new properties of deep scaled MOS transistors.
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Kaplon, J., Jarron, P. (2013). Front End Electronics for Solid State Detectors in Today and Future High Energy Physics Experiments. In: van Roermund, A., Baschirotto, A., Steyaert, M. (eds) Nyquist AD Converters, Sensor Interfaces, and Robustness. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-4587-6_10
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DOI: https://doi.org/10.1007/978-1-4614-4587-6_10
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