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Reliability Issues in AlGaN/GaN High Electron Mobility Transistors

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Materials and Reliability Handbook for Semiconductor Optical and Electron Devices

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Abstract

As AlGaN/GaN high electron mobility transistors gain commercial acceptance for use in high-power and high-frequency applications, it is becoming ever important to understand the degradation mechanisms that drive failure in the field. Because of the complex nature and multifaceted operation modes of these devices, reliability studies must go beyond the typical Arrhenius accelerated life tests. To do this, we investigated the electric field-driven degradation in devices with different gate metallization, device dimensions, and electric field mitigation techniques (such as source field plate) and the effect of device fabrication processes for both dc and RF stress conditions.

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Acknowledgments

The work performed at UF is supported by an AFOSR MURI monitored by James Hwang and Gregg Jessen.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, University of Florida, Gainesville, FL, 32611, USA

    E. A. Douglas, B. P. Gila & Stephen J. Pearton

  2. Department of Chemical Engineering, University of Florida, Gainesville, FL, 32611, USA

    L. Liu, C. F. Lo & F. Ren

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  1. E. A. Douglas
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  2. L. Liu
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  3. C. F. Lo
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  4. B. P. Gila
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  6. Stephen J. Pearton
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Correspondence to Stephen J. Pearton .

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Editors and Affiliations

  1. Graduate School of Engineering, Kanazawa Institute of Technology, Tokyo, Japan

    Osamu Ueda

  2. Materials Science and Engineering, University of Florida, Gainesville, Florida, USA

    Stephen J. Pearton

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Douglas, E.A., Liu, L., Lo, C.F., Gila, B.P., Ren, F., Pearton, S.J. (2013). Reliability Issues in AlGaN/GaN High Electron Mobility Transistors. In: Ueda, O., Pearton, S. (eds) Materials and Reliability Handbook for Semiconductor Optical and Electron Devices. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-4337-7_13

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