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Formation of Epitaxial Graphene

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Graphene Nanoelectronics

Abstract

This chapter starts off with a discussion on the history of graphite growth on SiC. It then gives an overview of various methods to grow epitaxial graphene on SiC; methods discussed include growth on various polytypes, at different vacuum levels and gas flows, and on both the Si- and C-face of SiC. Structural and electronic properties of these films are looked into along with carrier mobility results from Hall-bar and FET-structures where available.

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Acknowledgements

The authors thank Glenn Jernigan and Charles Eddy for a critical reading of the manuscript. We thank Rachael Myers-Ward, Ginger Wheeler, Jennifer Hite and Nelson Garces for useful discussions. LON is grateful for postdoctoral support from the ASEE. This work was supported by the Office of Naval Research.

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  1. U.S. Naval Research Laboratory, Washington, DC, USA

    D. Kurt Gaskill & Luke O. Nyakiti

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Correspondence to D. Kurt Gaskill .

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  1. , Nanotechnology Research Center, Georgia Institute of Technology, Atlantic Drive NW 791, Atlanta, 30332-0269, USA

    Raghu Murali

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Gaskill, D.K., Nyakiti, L.O. (2012). Formation of Epitaxial Graphene. In: Murali, R. (eds) Graphene Nanoelectronics. Springer, Boston, MA. https://doi.org/10.1007/978-1-4614-0548-1_6

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