Abstract
We have investigated InGaN nanostructures grown by atmospheric pressure metal-organic vapour phase epitaxy. The variation of the 3D nanostructure density and the wetting layer thickness with growth time have been studied. The nanostructure density was found to saturate with increasing growth time, but unexpectedly, the nanostructure size was also seen to stabilise. We have used high-resolution transmission electron microscopy (HRTEM) to further investigate the wetting layer growth and quantify changes with InGaN growth time.
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van der Laak, N.K., Oliver, R.A., Kappers, M.J., McAleese, C., Humphreys, C.J. (2005). Stranski-Krastanov growth for InGaN/GaN: wetting layer thickness changes. In: Cullis, A.G., Hutchison, J.L. (eds) Microscopy of Semiconducting Materials. Springer Proceedings in Physics, vol 107. Springer, Berlin, Heidelberg . https://doi.org/10.1007/3-540-31915-8_2
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DOI: https://doi.org/10.1007/3-540-31915-8_2
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-31914-6
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