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Si1−x−yGexCy alloys: Growth and properties of a new semiconducting material

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Advances in Solid State Physics 38

Part of the book series: Advances in Solid State Physics ((ASSP,volume 38))

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Abstract

The growth and properties of Si1−y Cy and Si1−x−y GexCy alloys pseudomorphically strained on Si(001) is reviewed. Although the bulk solubility of carbon in silicon is small, epitaxial layers which more than 1 at. % C can be fabricated by molecular beam epitaxy and different chemical vapor deposition techniques. One of the most crucial questions is the relation between substitutional and interstitial carbon incorporation, which has a large impact on the electrical and optical properties of these layers. Substitutionally incorporated C atoms allow strain manipulation, including the growth of an inversely strained Si1−x−y GexCy layer. Local ordering effects due to atomic size differences and the growth on reconstructed surfaces, the mechanical and structural properties, and the influence of C atoms on band structure and charge carrier properties will be discussed. We show how lower carbon concentrations can influence dopant diffusion, without affecting strain and band alignment. Finally, we present possible applications of this new semiconducting material.

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Authors and Affiliations

  1. Institute for Semiconductor Physics, Walter-Korsing-Str. 2, D-15230, Frankfurt (Oder), Germany

    H. Jörg Osten

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  1. H. Jörg Osten
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Bernhard Kramer

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© 1999 Friedr. Vieweg & Sohn Verlagsgesellschaft mbH

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Osten, H.J. (1999). Si1−x−yGexCy alloys: Growth and properties of a new semiconducting material. In: Kramer, B. (eds) Advances in Solid State Physics 38. Advances in Solid State Physics, vol 38. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0107611

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  • DOI: https://doi.org/10.1007/BFb0107611

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-41575-6

  • Online ISBN: 978-3-540-44558-6

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