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SiC: Polar properties and their influence on technology and devices

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Advances in Solid State Physics 38

Part of the book series: Advances in Solid State Physics ((ASSP,volume 38))

Abstract

Silicon Carbide (SiC) is one of the tetrahedrally coordinated semiconductor materials with a wide band gap E g. Due to the strong asymmetric valence charge density distribution along the ‘Si-C’ bond, nearly the complete bond charge is closely located at the carbon atom. Therefore, SiC is piezoelectric and shows a strong ‘Reststrahl’ absorption which allows the investigation of optical transitions due to impurities (vibrational and electronic transitions) only in a narrow band in the infrared spectral region. The polar character of the ‘Si-C’ bond also strongly influences the physico-chemical properties of SiC which are of fundamental importance for the successful development of process technologies for to electronic devices. The state of the art and new developments in the fields crystal growth, oxidation and reactive ion etching of SiC are reported. In addition to the polar properties of the SiC, also the anisotropic properties have to be taken into account for the design and the processing of electronic devices.

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  1. Institut für Angewandte Physik, Universität Erlangen-Nürnberg, Staudtstr. 7, D-91058, Erlangen, Germany

    R. Helbig & F. Engelbrecht

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  1. R. Helbig
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  2. F. Engelbrecht
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Bernhard Kramer

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© 1999 Friedr. Vieweg & Sohn Verlagsgesellschaft mbH

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Helbig, R., Engelbrecht, F. (1999). SiC: Polar properties and their influence on technology and devices. In: Kramer, B. (eds) Advances in Solid State Physics 38. Advances in Solid State Physics, vol 38. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0107609

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  • DOI: https://doi.org/10.1007/BFb0107609

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  • Print ISBN: 978-3-540-41575-6

  • Online ISBN: 978-3-540-44558-6

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