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Growth and characterization of II–VI semiconductor lasers

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Advances in Solid State Physics 38

Part of the book series: Advances in Solid State Physics ((ASSP,volume 38))

Abstract

Key components and operating characteristics of II–VI laser diodes have been investigated. The voltage drop at the contact to p-ZnSe could be reduced from above 10 V to below 2V at high current densities by a multilayer contact with ZnSe and ZnTe layers with variing thickness ratio. By the replacement of MgZnSSe with a ZnSe/MgZnSSe superlattice as material for the cladding layers in the laser diode, doping levels could be increased by a factor of 2 and with the use of ZnSe substrates instead of GaAs, high brightness light emitting devices and laser diodes with long lifetimes could be manufactured.

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Authors and Affiliations

  1. Fachbereich Physik, Universität Bremen, Kufsteiner Str. NW1, D-28359, Bremen, Germany

    M. Behringer, H. Wenisch, M. Fehrer, V. Großmann, A. Isemann, M. Klude, H. Heinke, K. Ohkawa & D. Hommel

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  1. M. Behringer
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  2. H. Wenisch
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  3. M. Fehrer
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  4. V. Großmann
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  5. A. Isemann
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  6. M. Klude
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  7. H. Heinke
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  8. K. Ohkawa
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  9. D. Hommel
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Bernhard Kramer

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© 1999 Friedr. Vieweg & Sohn Verlagsgesellschaft mbH

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Behringer, M. et al. (1999). Growth and characterization of II–VI semiconductor lasers. In: Kramer, B. (eds) Advances in Solid State Physics 38. Advances in Solid State Physics, vol 38. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0107607

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  • DOI: https://doi.org/10.1007/BFb0107607

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-41575-6

  • Online ISBN: 978-3-540-44558-6

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