Abstract
We recall in the introduction the main features of the drift-diffusion model for semiconductor devices, pointing out its physical meaning, its possible derivation, and its limits. Then, in Section 2, we present a mixed finite element method for the discretization of this model. Finally, using asymptotic analysis techniques, we compare the qualitative behaviour of the mixed method with other methods (classical conforming Galerking method and harmonic average methods). This asymptotic analysis provides some indication of the advantages of the mixed method.
Partially supported by C.N.R. Sp. proj. on Informatic systems and Parallel comput. and C.N.R. contr. 88.00326.01
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© 1991 Springer-Verlag
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Brezzi, F., Marini, L.D., Markowich, P., Pietra, P. (1991). On some numerical problems in semiconductor device simulation. In: Toscani, G., Boffi, V., Rionero, S. (eds) Mathematical Aspects of Fluid and Plasma Dynamics. Lecture Notes in Mathematics, vol 1460. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0091359
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DOI: https://doi.org/10.1007/BFb0091359
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