Abstract
The theoretical analysis of the diffusion in interconnects during the electromigration is performed in this chapter. Two main diffusion paths are compared: grain boundaries and electromigration induced dislocations. The electromigration induced dislocations are formed due to the crystal bending, described in the previous chapters, and form a short diffusion path in the direction of the current. These two possible diffusion paths can lead to the significantly different device failure time dependence on the current density. This can lead to an important implication for the way device lifetime/reliability is assessed.
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Budiman, A.S. (2015). Industrial Implications of Electromigration-Induced Plasticity in Cu Interconnects: Plasticity-Amplified Diffusivity. In: Probing Crystal Plasticity at the Nanoscales. SpringerBriefs in Applied Sciences and Technology. Springer, Singapore. https://doi.org/10.1007/978-981-287-335-4_5
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DOI: https://doi.org/10.1007/978-981-287-335-4_5
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