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Future Prospects of SiC Thermoelectrical Sensing Devices

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Thermoelectrical Effect in SiC for High-Temperature MEMS Sensors

Part of the book series: SpringerBriefs in Applied Sciences and Technology ((BRIEFSAPPLSCIENCES))

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Abstract

This chapter presents the future prospect of SiC MEMS thermoelectrical sensing devices in terms of the development of new platform and integration capability of SiC with other materials for high-temperature applications. The chapter also describes the possibility of using the thermoelectrical effect in SiC for possible applications in sensing systems, including resonant sensors. Challenges and opportunities for the development of SiC thermal devices in high-temperature applications will also be discussed.

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Author information

Authors and Affiliations

  1. Queensland Micro- and Nanotechnology Centre (QMNC), Griffth University, Brisbane, QLD, Australia

    Toan Dinh

  2. Queensland Micro- and Nanotechnology Centre (QMNC), Griffith University, Brisbane, QLD, Australia

    Nam-Trung Nguyen

  3. School of Engineering and Built Environment, Griffith University, Southport, QLD, Australia

    Dzung Viet Dao

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  1. Toan Dinh
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  2. Nam-Trung Nguyen
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  3. Dzung Viet Dao
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Correspondence to Toan Dinh .

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Dinh, T., Nguyen, NT., Dao, D.V. (2018). Future Prospects of SiC Thermoelectrical Sensing Devices. In: Thermoelectrical Effect in SiC for High-Temperature MEMS Sensors. SpringerBriefs in Applied Sciences and Technology. Springer, Singapore. https://doi.org/10.1007/978-981-13-2571-7_7

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