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Electronic Behavior of Nanocrystalline Silicon Thin Film Transistor

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Nanomaterials and Their Applications

Part of the book series: Advanced Structured Materials ((STRUCTMAT,volume 84))

Abstract

Thin film transistor (TFT) plays an important role for the fabrication of highly functional active matrix backplanes for large area display applications such as organic light emitting diodes (OLEDs). Nanocrystalline silicon (nc-Si) has recently achieved lot of interest over existing hydrogenated amorphous silicon (a-Si:H) and polycrystalline silicon (poly-Si) due to its superior properties which makes it suitable channel material for the fabrication of TFTs. In present work, the physical insight into the nc-Si TFT device characteristics and device non idealities is reported which can provide important step for the production of high performance large area display devices.

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Authors and Affiliations

  1. Department of Electrical & Electronics Engineering, Birla Institute of Technology and Science, Pilani, Rajasthan, India

    Prachi Sharma & Navneet Gupta

  2. Department of Electronics and Communication, K.I.E.T, Ghaziabad, 201206, Uttar Pradesh, India

    Prachi Sharma

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  1. Prachi Sharma
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  2. Navneet Gupta
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Correspondence to Prachi Sharma .

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  1. Applied Sciences & Humanities, Jamia Millia Islamia, New Delhi, Delhi, India

    Zishan Husain Khan

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Sharma, P., Gupta, N. (2018). Electronic Behavior of Nanocrystalline Silicon Thin Film Transistor. In: Khan, Z. (eds) Nanomaterials and Their Applications. Advanced Structured Materials, vol 84. Springer, Singapore. https://doi.org/10.1007/978-981-10-6214-8_8

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