Abstract
Notably, the physical characteristics of h-BN-G heterostructures are related to the linking type in the interface. Thus, it becomes an important subject that how to form particular-type boundaries during growth process and how to identify the atomic linking type. This chapter mainly introduces the study of interface type and interfacial electron state of h-BN-G heterostructures.
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Liu, M. (2018). Atomic and Electronic Structures of h-BN-G Interfaces. In: Controlled Synthesis and Scanning Tunneling Microscopy Study of Graphene and Graphene-Based Heterostructures. Springer Theses. Springer, Singapore. https://doi.org/10.1007/978-981-10-5181-4_5
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DOI: https://doi.org/10.1007/978-981-10-5181-4_5
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