Abstract
A new fs-laser anneal technique of isolating InAs/GaSb T2SL p-i-n photodetector array is identified. The fs anneal isolation improvement in 200–400 μm pixels due to spatially selective Quantum Well intermixing is confirmed by FTIR measurements. A 128 × 128 array of 8 μm square pixels is fabricated with SU8 polymer isolation after reactive ion etching pixel delineation. Photo-response of 8 and 200 μm pixels under ns pulsed condition shows a peak responsivity of ~0.03A/W and 0.2 mA/W, respectively, at λ ~ 3.7 μm. Effort is underway to integrate this work with that of DRDO for larger and more efficient T2SL MWIR photodiode arrays.
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Acknowledgements
The author thanks Prof. S. Krishna and N. Gautam (University of New Mexico, Albuquerque, USA) for the MBE growth of this InAs/GaSb T2SL. The access to the fs-laser facility at CELP and the measurements done at the FTIR facility of the Chemistry Department of IIT Kanpur are also gratefully acknowledged. I would also extend my thanks to Dr. A. K. Razdan and his group at LASTEC, DRDO for facilitating the photo-response measurements of the photodetector Array.
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Das, U. (2018). Mid-Infrared InAs/GaSb Type-II Superlattice Photodetector Arrays. In: Pradhan, A., Krishnamurthy, P. (eds) Selected Topics in Photonics. IITK Directions, vol 2. Springer, Singapore. https://doi.org/10.1007/978-981-10-5010-7_4
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