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Analysis of Different Interface Circuits

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CMOS Circuits for Piezoelectric Energy Harvesters

Part of the book series: Springer Series in Advanced Microelectronics ((MICROELECTR.,volume 38))

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Abstract

As described in the introduction, there are many ways to extract power from a piezoelectric harvester. On one hand, the diode rectifier is a simple interface circuit applicable to any power generator with an alternating output. Since the diodes are passive elements, there is no power supply necessary, which can be advantageous when the generated power is low. On the other hand, active power processing circuits like the formerly presented Synchronous Electric Charge Extraction (SECE) technique can increase the extracted power and decouple the load from the harvester. In the following, the basic theory behind the resistor load, the commonly used full-wave rectifier load, and the SECE load is described. At the end of this chapter, the characteristics of these different interface circuits are compared with regard to the electromechanical coupling and the excitationmodes at resonance and off-resonance. Whereas due to its linearity, the analysis of the purely resistive load can be done straightforward using simple Laplace transformations, the analysis of the full-wave rectifier load and the SECE load requires complex math to get general closed-form expressions for the output power. Since the fundamental analysis of the different interface circuits is not the main goal of this work, for the two latter load circuits, it is distinguished between excitation at resonance and off-resonance.

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Notes

  1. 1.

    For the operation at off-resonance, the mass displacement amplitude has been chosen such that the optimum output power using the resistor load corresponds to the value \(P_{\text {res,max}}\) at far off-resonance as given in Table 6.4.

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Correspondence to Thorsten Hehn .

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Hehn, T., Manoli, Y. (2015). Analysis of Different Interface Circuits. In: CMOS Circuits for Piezoelectric Energy Harvesters. Springer Series in Advanced Microelectronics, vol 38. Springer, Dordrecht. https://doi.org/10.1007/978-94-017-9288-2_3

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