Abstract
We have performed a systematic study of GaAs/(AlGa)As resonant tunnelling diodes in which the quantum well is intentionally δ-doped with Si donors. By comparing the I(V) of such devices with control samples we are able to identify a peak at low voltage which is due to resonant tunnelling through the localised bound states of the Si donors. To eliminate this peak from the control samples the MBE wafers must be grown at lower temperature (550°C) and with much wider spacer layers (200 A) than are typically used for resonant tunnelling diodes. Our work shows that the presence of intentional and/or unintentional donors may dominate I(V) close to the threshold for resonant tunnelling. The possibility of using this technique to assess MBE material will be discussed
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© 1993 Springer Science+Business Media Dordrecht
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Sakai, JW., Beton, P.H., Henini, M., Main, P.C., Eaves, L., Hill, G. (1993). Resonant Tunnelling via the Bound States of Shallow Donors. In: Salemink, H.W.M., Pashley, M.D. (eds) Semiconductor Interfaces at the Sub-Nanometer Scale. NATO ASI Series, vol 243. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-2034-0_9
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DOI: https://doi.org/10.1007/978-94-011-2034-0_9
Publisher Name: Springer, Dordrecht
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