Abstract
In this paper I will compare the growth of GaAs by Molecular Beam Epitaxy (MBE), Metalorganic Chemical Vapour Deposition (MOCVD) and Chemical Beam Epitaxy (CBE). In making the comparison I will consider the effects of substrate temperature and V/III ratio on the growth rate and will then discuss the problem of composition control for alloys with mixed group III elements. In each case I will discuss the mobile surface species and what is known concerning the preferred growth directions as a function of growth conditions. Finally I will discuss the question of selected area growth
In making the above comparisons I hope to highlight the key factors needed to assess the relative quality of the interfaces prepared by each technique
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© 1993 Springer Science+Business Media Dordrecht
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Foxon, C.T. (1993). A Comparison of Growth by Molecular Beam Epitaxy, Metalorganic Chemical Vapour Deposition and Chemical Beam Epitaxy. In: Salemink, H.W.M., Pashley, M.D. (eds) Semiconductor Interfaces at the Sub-Nanometer Scale. NATO ASI Series, vol 243. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-2034-0_6
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DOI: https://doi.org/10.1007/978-94-011-2034-0_6
Publisher Name: Springer, Dordrecht
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