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Surface Chemistry in the Si/Ge GSMBE system studied using RHEED

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Semiconductor Interfaces at the Sub-Nanometer Scale

Part of the book series: NATO ASI Series ((NSSE,volume 243))

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Abstract

There is increasing activity in the MBE growth of Si-Ge structures using gaseous Si and Ge hydrides as precursors. In this system, the one very significant difference from growth using elemental sources of Si and Ge is the surface chemistry involved. Not only are the reactions more complex, they also provide the rate limiting step in growth kinetics, so that growth rates are flux and temperature dependent over a wide range of parameters. The epitaxial growth of Si and Si1-xGex alloys from molecular beams of Si2H6 and GeH4 on Si(001) substrates has been studied by monitoring RHEED intensity oscillations in both the [001] and [110] azimuths. In this paper I will outline how the RHEED intensity oscillation technique can be used to provide important kinetic data to help in the evaluation of reaction pathways, growth anisotropy and surface segregation effects

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Author information

Authors and Affiliations

  1. Semiconductor Materials IRC, Imperial College of Science Technology and Medicine, Prince Consort Road, London, SW7 2BZ, UK

    Scott M. Mokler

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  1. Scott M. Mokler
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Editor information

Editors and Affiliations

  1. IBM Research Division, Zurich Research Laboratory, Rüschlikon, Switzerland

    H. W. M. Salemink

  2. Philips Laboratories, Briarcliff Manor, New York, USA

    M. D. Pashley

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© 1993 Springer Science+Business Media Dordrecht

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Mokler, S.M. (1993). Surface Chemistry in the Si/Ge GSMBE system studied using RHEED. In: Salemink, H.W.M., Pashley, M.D. (eds) Semiconductor Interfaces at the Sub-Nanometer Scale. NATO ASI Series, vol 243. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-2034-0_3

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  • DOI: https://doi.org/10.1007/978-94-011-2034-0_3

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-010-4900-9

  • Online ISBN: 978-94-011-2034-0

  • eBook Packages: Springer Book Archive

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